433 Products - tabel persamaan transistor d882 manufacturers and tabel persamaan transistor d882 suppliers Directory - Find tabel persamaan transistor d882. TO-126 PNP Power Transistor 2SB772 B772 / 2SD882 D882, US $ 0.032 - 0.04 / Piece, California, United States, Original, 2SB772.Source from Shenzhen Quanyuantong.
Type Designator: D882
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: SOT89
D882 Transistor Equivalent Substitute - Cross-Reference Search
D882 Datasheet (PDF)
1.1. bd882-o.pdf Size:302K _update
BD882-R MCC Micro Commercial Components TM BD882-O 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 BD882-Y Phone: (818) 701-4933 Fax: (818) 701-4939 BD882-GR Features Silicon • Lead Free Finish/RoHS Compliant ('P' Suffix designates RoHS Compliant. See ordering information) NPN epitaxial planer • Epoxy meets UL 94 V-0 flammability rating • Moisur
1.2. 2sd882-gr-r-o-y.pdf Size:305K _update
2SD882-R MCC Micro Commercial Components TM 2SD882-O 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SD882-Y Phone: (818) 701-4933 2SD882-GR Fax: (818) 701-4939 Features • Lead Free Finish/RoHS Compliant (Note1) ('P' Suffix designates NPN Silicon RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating Plastic-Encapsulat
1.3. bd882-gr.pdf Size:302K _update
BD882-R MCC Micro Commercial Components TM BD882-O 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 BD882-Y Phone: (818) 701-4933 Fax: (818) 701-4939 BD882-GR Features Silicon • Lead Free Finish/RoHS Compliant ('P' Suffix designates RoHS Compliant. See ordering information) NPN epitaxial planer • Epoxy meets UL 94 V-0 flammability rating • Moisur
1.4. tsd882s.pdf Size:244K _update
TSD882S Low Vcesat NPN Transistor TO-92 SOT-89 Pin Definition: Pin Definition: PRODUCT SUMMARY 1. Base 1. Emitter BVCBO 60V 2. Collector 2. Collector 3. Emitter 3. Base BVCEO 50V IC 3A VCE(SAT) 0.5V @ IC / IB = 2A / 200mA Features Ordering Information ● Low VCE(SAT) 0.25 @ IC / IB = 2A / 200mA (Typ.) Part No. Package Packing ● Complementary part with TSB
1.5. tsd882ck.pdf Size:616K _update
TSD882 Low Vcesat NPN Transistor TO-126 Pin Definition: PRODUCT SUMMARY 1. Emitter BVCBO 60V 2. Collector 3. Base BVCEO 30V IC 3A VCE(SAT) 0.5V @ IC=2A, IB=200mA Features Ordering Information ● Low VCE(SAT) 0.3 @ IC=2A, IB=200mA (Typ.) Part No. Package Packing ● Complementary part with TSB772 TSD882CK B0 TO-126 200pcs / Bulk TSD882CK B0G TO-126 200pcs / Bulk
1.6. bd882-r.pdf Size:302K _update
BD882-R MCC Micro Commercial Components TM BD882-O 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 BD882-Y Phone: (818) 701-4933 Fax: (818) 701-4939 BD882-GR Features Silicon • Lead Free Finish/RoHS Compliant ('P' Suffix designates RoHS Compliant. See ordering information) NPN epitaxial planer • Epoxy meets UL 94 V-0 flammability rating • Moisur
1.7. 2sd882zgp.pdf Size:120K _update
CHENMKO ENTERPRISE CO.,LTD 2SD882ZGP SMALL FLAT NPN Epitaxial Transistor VOLTAGE 30 Volts CURRENT 3 Ampere APPLICATION * Power driver and Dc to DC convertor . FEATURE * Small flat package. (SC-73/SOT-223) SC-73/SOT-223 * Low saturation voltage VCE(sat)=0.5V(max.)(IC=2A) * High speed switching time: tstg= 1.0uSec (typ.) 1.65+0.15 * PC= 1.5 W (mounted on ceramic substrate). 6.50+0
1.8. bd882-y.pdf Size:302K _update
BD882-R MCC Micro Commercial Components TM BD882-O 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 BD882-Y Phone: (818) 701-4933 Fax: (818) 701-4939 BD882-GR Features Silicon • Lead Free Finish/RoHS Compliant ('P' Suffix designates RoHS Compliant. See ordering information) NPN epitaxial planer • Epoxy meets UL 94 V-0 flammability rating • Moisur
1.9. 2sd882gp.pdf Size:108K _update
CHENMKO ENTERPRISE CO.,LTD 2SD882GP SMALL FLAT NPN Epitaxial Transistor VOLTAGE 30 Volts CURRENT 3 Ampere APPLICATION * Power driver and Dc to DC convertor . FEATURE * Small flat package. (SC-62/SOT-89) SC-62/SOT-89 * Low saturation voltage VCE(sat)=0.5V(max.)(IC=2A) * High speed switching time: tstg= 1.0uSec (typ.) * PC= 1.5 W (mounted on ceramic substrate). 4.6MAX. 1.6MAX. *
1.10. gstd882.pdf Size:343K _upd
GSTD882 NPN Epitaxial Planar Transistors Product Description Features This device is designed as a general purpose Lead(Pb)-Free amplifier and switch. Packages & Pin Assignments TO-252 Pin Description 1 Base 2 Collector 3 Emitter Marking Information P/N Package Rank Part Marking GSTD882F TO-252 (R) / (O) / (Y) / (GR) D882 Ordering Information Part Number Package Qua
1.11. d882h.pdf Size:129K _upd
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors D882H TRANSISTOR (NPN) SOT-89-3L FEATURE Low VCE(sat) Large current capacity 1. BASE 2. COLLECTOR 3. EMITTER MAKING: D882H MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 70
1.12. dxtd882.pdf Size:87K _upd
DC COMPONENTS CO., LTD. DXTD882 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for the output stage of 0.75W audio, voltage regulator, and relay driver. SOT-89 .063(1.60) .066(1.70) Pinning .055(1.40) .059(1.50) 1 = Base 2 = Collector 3 = Emitter .102(2.60) .167(4.25) .095(2.40) .159(4.05) 1 2 3 Absolute Maximu
1.13. d882m.pdf Size:592K _upd
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors D882M TRANSISTOR (NPN) TO-252-2L FEATURES 1. BASE Power Dissipation 2. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 3 .EMITTER Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Colle
1.14. 2sd882.pdf Size:110K _st
2SD882 NPN medium power transistor Features ¦ High current ¦ Low saturation voltage ¦ Complement to 2SB772 Applications 1 ¦ Voltage regulation 2 3 ¦ Relay driver SOT-32 ¦ Generic switch (TO-126) ¦ Audio power amplifier ¦ DC-DC converter Figure 1. Internal schematic diagram Description The device is a NPN transistor manufactured by using planar technology resulting in rugged
1.15. ksd882.pdf Size:131K _fairchild_semi
November 2007 KSD882 NPN Epitaxial Silicon Transistor Recommended Applications • Audio Frequency Power Amplifier Featuers • Low Speed Switcing TO-126 1 • Complement to KSB772. 1. Emitter 2.Collector 3.Base Absolute Maximum Ratings* Ta = 25°C unless otherwise noted Symbol Parameter Ratings Units BVCBO Collector-Base Voltage 40 V BVCEO Collector-Emitter Voltage 30 V BVEBO Emitter-Bas
1.16. 2sd882.pdf Size:165K _nec
1.17. 2sd882.pdf Size:210K _utc
UNISONIC TECHNOLOGIES CO., LTD 2SD882 NPN SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR FEATURES * High current output up to 3A * Low saturation voltage * Complement to 2SB772 APPLICATIONS * Audio power amplifier * DC-DC convertor * Voltage regulator ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Normal Lead Free Halogen Free 1 2 3
1.18. d882ss.pdf Size:154K _utc
UNISONIC TECHNOLOGIES CO., LTD D882SS NPN SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR FEATURES * High Current Output up to 3A * Low Saturation Voltage * Complement to B772SS APPLICATIONS * Audio Power Amplifier * DC-DC Convertor * Voltage Regulator ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Normal Lead Free Halogen Free 1 2 3
1.19. 2sd882l.pdf Size:23K _utc
UTC 2SD882L NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR FEATURES *High current output up to 3A *Low saturation voltage *Complement to 2SB772L APPLICATIONS * Audio power amplifier * DC-DC convertor * Voltage regulator TO-92L 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified ) PARAMETER SYMBOL RATING UNIT Collector-ba
1.20. 2sd882s.pdf Size:141K _utc
UNISONIC TECHNOLOGIES CO., LTD 2SD882S NPN SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR FEATURES * High current output up to 3A * Low saturation voltage * Complement to 2SB772S APPLICATIONS * Audio power amplifier * DC-DC convertor * Voltage regulator ORDERING INFORMATION Order Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SD882
1.21. std882d.pdf Size:290K _auk
STD882D NPN Silicon Transistor Description PIN Connection • Suitable for low voltage large current drivers • Excellent hFE Linearity • Complementary pair with STB772D • Switching Application Features • Low collector saturation voltage VCE(sat)=0.4V(Max.) TO-252 Ordering Information Type NO. Marking Package Code STD882D STD882 TO-252 Absolute maximum r
1.22. d882.pdf Size:271K _secos
D882 NPN Type Elektronische Bauelemente Plastic Encapsulate Transistors RoHS Compliant Product A suffix of '-C' specifies halogen & lead-free TO-126 3.2± 0.2 8.0±0.2 2.0± 0.2 4.14±0.1 Features O2.8±0.1 O3.2±0.1 11.0±0.2 1.4±0.1 1 2 3 o MAXIMUM RATINGS* TA=25 C unless otherwise noted 1.27±0.1 Symbol Parameter Value Units 15.3±0.2 VCBO Collector-Base Voltage 40
1.23. d882s.pdf Size:209K _secos
D882S NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES ? Power Dissipation G H J Millimeter REF. A D Min. Max. CLASSIFICATION OF hFE A 4.40 4.70 B B 4.30 4.70 C 12.70 - K D 3.30 3.81 E 0.36 0.56 Rank R 0 Y GR F 0.36 0.51 E C F G 1.27 TYP. 60-120 160-320 200-400
1.24. csd882 p q.pdf Size:243K _cdil
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN PLASTIC POWER TRANSISTOR CSD882 TO126 Plastic Package E C B Complementary CSB772 Audio Frequency Power Amplifier and Low Speed Switching Applications ABSOLUTE MAXIMUM RATINGS(Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL VALUE UNIT VCBO Collector Base Voltage(open emitter) >40 V
1.25. ktd882.pdf Size:396K _kec
SEMICONDUCTOR KTD882 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER A LOW SPEED SWITCHING B D C E FEATURES F Complementary to KTB772. G H DIM MILLIMETERS J A 8.3 MAX MAXIMUM RATING (Ta=25 ) K B 5.8 L C 0.7 CHARACTERISTIC SYMBOL RATING UNIT _ + D Φ3.2 0.1 E 3.5 VCBO Collector-Base Voltage 40 V _ + F 11.0 0.3 G 2.9 MAX VCEO Collec
1.26. 2sd882.pdf Size:201K _inchange_semiconductor
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD882 DESCRIPTION · ·With TO-126 package ·Complement to type 2SB772 APPLICATIONS ·Audio amplifier ·Voltage regulator ·DC-DC converter ·Relay driver PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDIT
1.27. d882.pdf Size:299K _htsemi
D882 TRANSISTOR (NPN) SOT-89 FEATURES 1. BASE Power dissipation 2. COLLECTOR 1 2 3. EMITTER 3 MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 3 A PC Collector Power Dissipation 0.5 W TJ Junction Tempera
1.28. d882 to-252-2l.pdf Size:195K _lge
D882 Transistor(NPN) 1. BASE TO-252-2L 2. COLLECTOR 3 .EMITTER Features Power dissipation Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 3 A PC Collector Power Dissipation
1.29. d882 to-251.pdf Size:230K _lge
D882(NPN) TO-251 Transistor TO-251 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 Features Power dissipation MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V Dimensions in inches and (millimeters) VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 3 A PC Collector Power
1.30. d882 to-126.pdf Size:254K _lge
D882(NPN) TO-126 Transistor TO-126 1. EMITTER 2. COLLECTOR 3. BASE 3 2 1 Features Power dissipation 2.500 7.400 2.900 1.100 7.800 1.500 MAXIMUM RATINGS (TA=25? unless otherwise noted) 3.900 3.000 4.100 Symbol Parameter Value Units 3.200 10.600 0.000 VCBO Collector-Base Voltage 40 V 11.000 0.300 VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Vol
1.31. d882 sot-89.pdf Size:200K _lge
D882 SOT-89 Transistor(NPN) 1. BASE 2. COLLECTOR 1 SOT-89 2 4.6 B 4.4 3. EMITTER 1.6 3 1.8 1.4 1.4 2.6 4.25 2.4 3.75 Features 0.8 MIN Power dissipation 0.53 0.40 0.48 0.44 2x) 0.13 B 0.35 0.37 1.5 3.0 MAXIMUM RATINGS (TA=25? unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V
1.32. d882s.pdf Size:206K _lge
D882S Transistor(NPN) 1.EMITTER TO-92 2.COLLECTOR 3.BASE Features Power dissipation MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 3 A Dimensions in inches and (millimeters) PC Collector Power Dissipation 0.
1.33. wtd772 wtd882.pdf Size:266K _wietron
WTD772 WTD882 PNP/NPN Epitaxial Planar Transistors TO-252/D-PAK P b Lead(Pb)-Free 1. BASE 2. COLLECTOR 3 3. EMITTER 2 1 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol PNP/WTD772 Unit NPN/WTD882 Collector-E m itter Voltage V 3 0 Vdc CE O -3 0 Collector-B as e Voltage VCB O -4 0 4 0 Vdc E m itter-B as e Voltage VE B O -5 . 0 5 . 0 Vdc Collector Current (DC) IC(DC) -3 . 0 3 . 0
1.34. 2sb772 2sd882.pdf Size:687K _wietron
2SB772 2SD882 PNP / NPN Epitaxial Planar Transistors TO-126 P b Lead(Pb)-Free 1.EMITTER 2.COLLECTOR 3.BASE 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Rating Symbol PNP/2SB772 Unit NPN/2SD882 VCEO -30 30 Vdc Collector-Emitter Voltage VCBO -40 40 Vdc Collector-Base Voltage VEBO -5.0 5.0 Vdc Emitter-Base Voltage IC(DC) -3.0 3.0 Adc Collector Current(DC) IC(Pulse) -7.0 7.0 Adc Co
1.35. d882.pdf Size:475K _willas
FM120-M WILLAS THRU D882 SOT-89 Plastic-Encapsulate Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produc Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to opt mize b
1.36. hsd882.pdf Size:50K _hsmc
Spec. No. : HE6004 HI-SINCERITY Issued Date : 1998.03.15 Revised Date : 2005.08.15 MICROELECTRONICS CORP. Page No. : 1/5 HSD882 NPN EPITAXIAL PLANAR TRANSISTOR Description The HSD882 is designed for using in output stage of 1w audio amplifier, voltage regulator, DC-DC converter and relay driver. TO-126ML Absolute Maximum Ratings (TA=25°C) • Maximum Temperatures Storage Temperature
1.37. hsd882s.pdf Size:55K _hsmc
Spec. No. : HE6544 HI-SINCERITY Issued Date : 1992.11.25 Revised Date : 2006.07.28 MICROELECTRONICS CORP. Page No. : 1/5 HSD882S NPN Epitaxial Planar Transistor Description The HSD882S is suited for the output stage of 0.75W audio, voltage regulator, and relay driver. TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature..........................................
1.38. btd882i3.pdf Size:225K _cystek
Spec. No. : C848I3-H Issued Date : 2003.04.02 CYStech Electronics Corp. Revised Date : 2010.11.05 Page No. : 1/6 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 30V IC 3A BTD882I3 RCESAT 125mΩ typ. Features • Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A • Excellent current gain characteristics • Complementary to BTB772I3 • RoHS compliant package Symb
1.39. btd882am3.pdf Size:246K _cystek
Spec. No. : C848M3-H Issued Date : 2003.06.17 CYStech Electronics Corp. Revised Date : 2013.08.12 Page No. : 1/7 Low V NPN Epitaxial Planar Transistor CE(sat) BVCEO 50V IC 3A BTD882AM3 RCESAT (Typ) 125mΩ Features • Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A • Excellent current gain characteristics • Complementary to BTB772AM3 • Pb-free lead plating p
1.40. btd882sa3.pdf Size:302K _cystek
Spec. No. : C848A3-H Issued Date : 2003.05.31 CYStech Electronics Corp. Revised Date :2013.03.21 Page No. : 1/7 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 50V IC 3A BTD882SA3 RCESAT (Typ) 125mΩ Features • Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A • Excellent current gain characteristics • Complementary to BTB772SA3 • Pb-free lead plating and h
1.41. btd882t3.pdf Size:320K _cystek
Spec. No. : C848T3-H Issued Date : 2002.08.18 CYStech Electronics Corp. Revised Date : 2014.03.17 Page No. : 1/6 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 30V IC 3A BTD882T3 RCESAT (Typ) 125mΩ Features • Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A • Excellent current gain characteristics • Complementary to BTB772T3 • Pb-free package Symbol Out
1.42. btd882j3.pdf Size:302K _cystek
Spec. No. : C848J3-H Issued Date : 2003.04.02 CYStech Electronics Corp. Revised Date :2013.03.12 Page No. : 1/7 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 50V IC 3A BTD882J3 RCESAT (Typ) 125mΩ Features • Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A • Excellent current gain characteristics • Complementary to BTB772J3 • Pb-free package Symbol Outli
1.43. btd882d3.pdf Size:177K _cystek
Spec. No. : C848D3-H Issued Date : 2005.05.04 CYStech Electronics Corp. Revised Date :2006.04.21 Page No. : 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTD882D3 Features • Low VCE(sat), VCE(sat)=0.25 V (typical), at IC / IB = 2A / 200mA • Excellent current gain characteristics • Complementary to BTB772D3 • Pb-free package Symbol Outline BTD882D3 TO-126ML Bï
1.44. btd882st3.pdf Size:249K _cystek
Spec. No. : C858T3 Issued Date : 2011.06.28 CYStech Electronics Corp. Revised Date : Page No. : 1/7 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 30V IC 3A BTD882ST3 RCESAT(typ) 150mΩ Features • Low VCE(sat), 0.3V typ. at IC / IB = 2A / 0.2A • Excellent current gain characteristics • Complementary to BTB772ST3 • Pb-free lead plating package Symbol Outline
1.45. d882 to-126.pdf Size:325K _can-sheng
深圳市灿升实业发展有限公司 ShenZhen CanSheng Industry Development Co.,Ltd ShenZhen CanSheng Industry Development Co.,Ltd ShenZhen CanSheng Industry Development Co.,Ltd www.szcansheng.com ShenZhen CanSheng Industry Development Co.,Ltd. TO-126 Plastic-Encapsulate Transistors TO-126 Plastic-Encapsulate Transistors TO-126 Plastic-Encapsulate Transistors TO-126 Plastic-Encapsula
1.46. d882.pdf Size:481K _can-sheng
TO-126 Plastic-Encapsulate Transistors D882 TRANSISTOR (NPN) TO-126 TO-126 TO-126 TO-126 FEATURES Power dissipation MAXIMUM RATINGS (TA=25 unless otherwise noted) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) MAXIMUM RATINGS (TA=25 unless otherwise noted) 1. EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) 2. COLLECTOR Symbol Parameter Value Units Symbol Parameter Value
1.47. d882-89 3a.pdf Size:185K _can-sheng
深圳市灿升实业发展有限公司 ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com D882 TRANSISTOR (NPN) SOT-89 1. BASE FEATURES Power dissipation 2. COLLECTOR MARKING: D882 1 2 3. EMITTER 3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO
1.48. d882 to-252.pdf Size:330K _can-sheng
深圳市灿升实业发展有限公司 ShenZhen CanSheng Industry Development Co.,Ltd ShenZhen CanSheng Industry Development Co.,Ltd ShenZhen CanSheng Industry Development Co.,Ltd www.szcansheng.com ShenZhen CanSheng Industry Development Co.,Ltd. TO-252 Plastic-Encapsulate Transistors TO-252 Plastic-Encapsulate Transistors TO-252 Plastic-Encapsulate Transistors TO-252 Plastic-Encapsula
1.49. 2sd882t.pdf Size:1094K _blue-rocket-elect
2SD882T(BR3DA882T) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-89 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-89 Plastic Package. 特征 / Features 饱和压降 V 小,h 高且线性极好。 CE(sat) FE Low saturation voltage, excellent hFE linearity and high hFE. 用途 / Applications 用于 3 瓦音频放大输出,电压调节器,电源转æ
1.50. 2sd882l.pdf Size:617K _blue-rocket-elect
2SD882L(BR3DA882L) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-92LM 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-92LM Plastic Package. 特征 / Features 饱和压降 V 小,h 高且线性极好。 CE(sat) FE Low saturation voltage, excellent hFE linearity and high hFE. 用途 / Applications 用于 3 瓦音频放大输出,电压调节器,电源转æ
1.51. 2sd882n.pdf Size:525K _blue-rocket-elect
2SD882N(BR3DA882N) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-223 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-223 Plastic Package. 特征 / Features 饱和压降 V 小,h 高且线性极好。 CE(sat) FE Low saturation voltage,excellent hFE linearity and high hFE. 用途 / Applications 用于 3 瓦音频放大输出,电压调节器,电源转æ
1.52. 2sd882i.pdf Size:804K _blue-rocket-elect
2SD882I(BR3DA882I) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-251 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-251 Plastic Package. 特征 / Features 饱和压降 V 小,h 高且线性极好。 CE(sat) FE Low saturation voltage, excellent hFE linearity and high hFE. 用途 / Applications 用于 3 瓦音频放大输出,电压调节器,电源转换
1.53. 2sd882d.pdf Size:536K _blue-rocket-elect
2SD882D(BR3DA882D) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-252 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-252 Plastic Package. 特征 / Features 饱和压降 V 小,h 高且线性极好。 CE(sat) FE Low saturation voltage,excellent hFE linearity and high hFE. 用途 / Applications 用于 3 瓦音频放大输出,电压调节器,电源转换å
1.54. 2sd882b.pdf Size:706K _blue-rocket-elect
2SD882B(BR3DA882BR) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-220 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-220 Plastic Package. 特征 / Features 饱和压降 V 小,h 高且线性极好。 CE(sat) FE Low saturation voltage, excellent hFE linearity and high hFE. 用途 / Applications 用于 3 瓦音频放大输出,电压调节器,电源转æ
1.55. st2sd882u-p.pdf Size:297K _semtech
ST 2SD882U-P NPN SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in medium power linear and switching applications TO-126 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit 120 V Collector Base Voltage VCBO 100 V Collector Emitter Voltage VCES 100 V Collector Emitter Voltage VCEO Emitter Base Voltage VEBO 6 V Collector
1.56. st2sd882u.pdf Size:535K _semtech
ST 2SD882U NPN Silicon Power Transistor The transistor is subdivided into four groups, R, Q, P and E, according to its DC current gain. Absolute Maximum Ratings (Ta = 25℃) Parameter Symbol Value Unit Collector to Base Voltage VCBO 40 V Collector to Emitter Voltage VCEO 30 V Emitter to Base Voltage VEBO 5 V Collector Current IC 3 A Peak Collector Current (t = 350 µs) ICP 7 A T
1.57. st2sd882t.pdf Size:386K _semtech
ST 2SD882T NPN Silicon Power Transistor The transistor is subdivided into four groups, R, Q, P and E, according to its DC current gain. E C B TO-126 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Symbol Value Unit Parameter Collector to Base Voltage VCBO 40 V Collector to Emitter Voltage VCEO 30 V Emitter to Base Voltage VEBO 5 V Collector Current IC 3 A Collector C
1.58. st2sd882ht.pdf Size:439K _semtech
ST 2SD882HT NPN Silicon Power Transistor The transistor is subdivided into four groups, R, Q, P and E, according to its DC current gain. E C B TO-126 Plastic Package Absolute Maximum Ratings (Ta = 25℃) Parameter Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 30 V Emitter Base Voltage VEBO 5 V Collector Current IC 3 A Collector C
1.59. l2sd882q.pdf Size:132K _lrc
LESHAN RADIO COMPANY, LTD. PNPSURFACEMOUNTTRANSISTOR L2SB882Q L2SB882P We declare that the material of product compliance with RoHS requirements. 4 1 2 3 DEVICE MARKING AND ORDERING INFORMATION SOT-89 Device Marking Shipping L2SB882Q 82Q 2500/Tape&Reel 2,4 L2SB882P 82P 2500/Tape&Reel COLLECTOR 1 MAXIMUM RATINGS(Ta=25°C) BASE Parameter Symbol Limits Unit 3 Collector-bas
1.60. hd882s.pdf Size:26K _shantou-huashan
N P N S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HD882S █ AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING █ ABSOLUTE MAXIMUM RATINGS(Ta=25℃) TO-92 Tstg——Storage Temperature⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯ -55~150℃ Tj——Junction Temperature⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯150℃ PC——Collector Dissipation⋯⋯â‹
1.61. d882p.pdf Size:119K _jdsemi
R D882P 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. ◆Si NPN ◆RoHS COMPLIANT 1. 1. 1.APPLICATION 1. Charger、Emergency lamp and Electric toy control circuit 2. 2. 2.FEATURES 2.
1.62. d882pc.pdf Size:117K _jdsemi
R D882PC 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. ◆Si NPN ◆RoHS COMPLIANT 1. 1. 1.APPLICATION 1. Charger、Emergency lamp and Electric toy control circuit 2. 2. 2.FEATURES 2.
1.63. d882pc 2.pdf Size:118K _jdsemi
R D882PC 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. ◆Si NPN ◆RoHS COMPLIANT 1. 1. 1.APPLICATION 1. Charger、Emergency lamp and Electric toy control circuit 2 2. 2. 2.FEATURES 2
1.64. ftd882d.pdf Size:371K _first_silicon
SEMICONDUCTOR FTD882D TECHNICAL DATA FTD882D TRANSISTOR A I FEATURES C J Low Speed Switching DIM MILLIMETERS A 6 50 ± 0 2 B 5 60 ± 0 2 C 5 20 ± 0 2 MAXIMUM RATINGS (Ta=25 unless otherwise noted) D 1 50 ± 0 2 E 2 70 ± 0 2 F 2 30 ± 0 1 Symbol Parameter Value Unit H H 1 00 MAX I 2 30 ± 0 2 L F F VCBO Collector-Base Voltage 40 V J 0 5 ± 0 1 L 0 50 ± 0 10 1 2 3
1.65. ftd882.pdf Size:114K _first_silicon
SEMICONDUCTOR FTD882 TECHNICAL DATA AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING D E A FEATURES Complementary to FTB772. C F G DIM MILLIMETERS B A 8.3 MAX MAXIMUM RATING (Ta=25 ) B 11.3±0.3 C 4.15 TYP 1 2 3 CHARACTERISTIC SYMBOL RATING UNIT D 3.2±0.2 E 2.0±0.2 H F 2.8±0.1 VCBO Collector-Base Voltage 40 V I G 3.2±0.1 H 1.27±0.1 VCEO K Collector-Emitter V
1.66. ftd882f.pdf Size:289K _first_silicon
SEMICONDUCTOR FTD882F TECHNICAL DATA A FTD882F NPN TRANSISTOR C H G FEATURES Power dissipation D D K F F DIM MILLIMETERS A 4.70 MAX MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) _ + B 2.50 0.20 C 1.70 MAX 1 2 3 D 0.45+0.15/-0.10 Symbol Parameter Value Unit E 4.25 MAX _ + F 1.50 0.10 VCBO Collector-Base Voltage 40 V G 0.40 TYP 1. BASE H 1.8 MAX 2. COLLE
1.67. 2sd882.pdf Size:1104K _kexin
SMD Type Transistors NPN Tr ansistors 2SD882 Features 1.70 0.1 Excellent hFE linearity and high hFE hFE = 60 to 400 (VCE = 2 V, IC = 1 A) 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to Base Voltage VCBO 40 V Collector to Emitter Voltage VCEO 30 V Emitter to Base Voltage VEBO 6 V Collector Current to Cont
1.68. 2sd882a.pdf Size:490K _kexin
SMD Type Transistors NPN Tr ansistors 2SD882A 1.70 0.1 Features Excellent hFE linearity and high hFE hFE = 60 to 400 (VCE = 2 V, IC = 1 A) 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to Base Voltage VCBO 70 V Collector to Emitter Voltage VCEO 60 V Emitter to Base Voltage VEBO 6 V Collector Current to Co
1.69. 2sd882-252.pdf Size:52K _kexin
Transistors SMD Type Transistors NPN Silicon Power Transistor 2SD882 TO-252 Features Unit: mm 6.50+0.15 2.30+0.1 -0.15 -0.1 Collector Power Dissipation: PC=1.25W +0.8 5.30+0.2 0.50-0.7 -0.2 Collector Current: IC=3A 0.127 0.80+0.1 max -0.1 2 1 3 2.3 0.60+0.1 -0.1 1 Base +0.15 4.60-0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating
1.70. d882-sot89.pdf Size:283K _shenzhen-tuofeng-semi
Shenzhen Tuofeng Semiconductor Technology Co., Ltd D882 SOT-89 SOT-89 1. BASE 2. COLLECTOR 1 2 3. EMITTER 3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 3 A PC Collector Power Dissipation 0.5 W TJ Junct
1.71. d882.pdf Size:194K _shenzhen-tuofeng-semi
Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-126 Plastic-Encapsulate Transistors TO-126 D882 TRANSISTOR ( NPN ) FEATURES Power dissipation 1. EMITTER PCM : 1.25 W ( Tamb=25℃ ) 2. COLLECTOR 3. BASE 1 2 3 MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEB
Datasheet: FMMTL619, FZT1049A, FZT1051A, FZT1151A, FZT489, FZT491A, FZT589, FZT591A, 9014, MMBT2222AT, MMBT3904LP, MMBT3904T, MMBT3906LP, MMBT3906T, MMBT4401T, MMBT4403T, MMDT2222A.
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